New Flash Memory Solutions Hit 10 GB/s to Power Next-Gen Mobile AI.
Kioxia launches UFS 5.0 flash memory reaching heights of 10 GB/s for high-speed AI processing on mobile devices.
Kioxia Corporation has introduced its latest UFS 5.0 embedded flash memory. This groundbreaking technology aims to support the next generation of mobile AI devices.
The firm will demonstrate these solutions at the upcoming Future of Memory and Storage event. Commercial samples are now available in 1 TB and 512 GB capacities. Mass production should commence by the end of 2026. Moreover, this new standard utilises the MIPI M-PHY v6.0 physical layer.
Consequently, the devices support theoretical interface speeds of up to 46.6 Gb/s per lane. They achieve effective dual-lane read performance of approximately 10.8 GB/s. Storage performance is vital as AI workloads shift towards local devices. However, large language models require rapid data movement between storage and compute units.
Kioxia’s UFS 5.0 effectively removes existing bottlenecks. Therefore, users will experience faster application loading and significantly better responsiveness. The solution combines a proprietary controller with generation 8 3D flash memory. These advanced components offer significant improvements in performance and power efficiency.
Sequential read speeds reach up to 10 GB/s. Furthermore, sequential write performance peaks at 9.0 GB/s. The compact package measures just 7.5 by 13 millimetres. This size is notably smaller than previous generations.
The technology suits premium smartphones and AI-enabled tablets. Additionally, it works for gaming systems and industrial edge applications. Kioxia continues to innovate within its UFS portfolio. Thus, these advancements meet the rising demand for high-capacity mobile storage.
(Source: businesswire)
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